Metallic & Material Data
Transport, thermodynamic, and quantum properties of metals and materials — resistivity, conductivity, Fermi energy, work function, and superconducting critical temperatures.
Source: CRC Handbook; Kittel; Ashcroft & Mermin
Electrical Resistivity
Electrical Resistivity ρ at 20 °C
| Silver (Ag) | 1.59 | × 10⁻⁸ Ω·m | |
| Copper (Cu) | 1.68 ± 0.02 | × 10⁻⁸ Ω·m | |
| Gold (Au) | 2.44 | × 10⁻⁸ Ω·m | |
| Aluminium (Al) | 2.65 | × 10⁻⁸ Ω·m | |
| Calcium (Ca) | 3.36 | × 10⁻⁸ Ω·m | |
| Magnesium (Mg) | 4.45 | × 10⁻⁸ Ω·m | |
| Tungsten (W) | 5.60 | × 10⁻⁸ Ω·m | |
| Zinc (Zn) | 5.90 | × 10⁻⁸ Ω·m | |
| Cobalt (Co) | 6.24 | × 10⁻⁸ Ω·m | |
| Nickel (Ni) | 6.99 | × 10⁻⁸ Ω·m | |
| Iron (Fe) | 10.0 ± 0.1 | × 10⁻⁸ Ω·m | |
| Platinum (Pt) | 10.6 | × 10⁻⁸ Ω·m | |
| Tin (Sn) | 11.0 | × 10⁻⁸ Ω·m | |
| Molybdenum (Mo) | 5.47 | × 10⁻⁸ Ω·m | |
| Iridium (Ir) | 5.09 | × 10⁻⁸ Ω·m | |
| Rhodium (Rh) | 4.33 | × 10⁻⁸ Ω·m | |
| Chromium (Cr) | 12.7 | × 10⁻⁸ Ω·m | |
| Lead (Pb) | 20.8 | × 10⁻⁸ Ω·m | |
| Titanium (Ti) | 42.0 | × 10⁻⁸ Ω·m | |
| Bismuth (Bi) | 130 | × 10⁻⁸ Ω·m | |
| Mercury (Hg, liq.) | 98.0 | × 10⁻⁸ Ω·m | |
| Stainless steel 304 | ~72 | × 10⁻⁸ Ω·m | |
| Graphite (⊥ layers) | ~50 000 | × 10⁻⁸ Ω·m |
Temperature Coefficient of Resistivity α (at 20 °C)
| Silver (Ag) | 3.8 | × 10⁻³ K⁻¹ | |
| Copper (Cu) | 3.9 | × 10⁻³ K⁻¹ | |
| Gold (Au) | 3.4 | × 10⁻³ K⁻¹ | |
| Aluminium (Al) | 3.9 | × 10⁻³ K⁻¹ | |
| Tungsten (W) | 4.5 | × 10⁻³ K⁻¹ | |
| Iron (Fe) | 5.0 | × 10⁻³ K⁻¹ | |
| Nickel (Ni) | 6.0 | × 10⁻³ K⁻¹ | |
| Platinum (Pt) | 3.92 | × 10⁻³ K⁻¹ | |
| Lead (Pb) | 3.9 | × 10⁻³ K⁻¹ | |
| Nichrome (NiCr) | 0.4 | × 10⁻³ K⁻¹ | |
| Manganin | 0.002 | × 10⁻³ K⁻¹ |
Thermal Conductivity
Thermal Conductivity κ at 25 °C
| Diamond | 1 000–2 200 | W m⁻¹ K⁻¹ | |
| Silver (Ag) | 429 | W m⁻¹ K⁻¹ | |
| Copper (Cu) | 401 | W m⁻¹ K⁻¹ | |
| Gold (Au) | 318 | W m⁻¹ K⁻¹ | |
| Aluminium (Al) | 237 | W m⁻¹ K⁻¹ | |
| Beryllium (Be) | 200 | W m⁻¹ K⁻¹ | |
| Tungsten (W) | 174 | W m⁻¹ K⁻¹ | |
| Magnesium (Mg) | 156 | W m⁻¹ K⁻¹ | |
| Zinc (Zn) | 116 | W m⁻¹ K⁻¹ | |
| Nickel (Ni) | 91 | W m⁻¹ K⁻¹ | |
| Iron (Fe) | 80 | W m⁻¹ K⁻¹ | |
| Platinum (Pt) | 71.6 | W m⁻¹ K⁻¹ | |
| Tin (Sn) | 67 | W m⁻¹ K⁻¹ | |
| Titanium (Ti) | 21.9 | W m⁻¹ K⁻¹ | |
| Lead (Pb) | 35.3 | W m⁻¹ K⁻¹ | |
| Stainless steel 304 | 16.2 | W m⁻¹ K⁻¹ | |
| Silicon (Si) | 148 | W m⁻¹ K⁻¹ | |
| Germanium (Ge) | 60 | W m⁻¹ K⁻¹ | |
| Boron nitride (h-BN) | ~400 | W m⁻¹ K⁻¹ | |
| Alumina (Al₂O₃) | 30 | W m⁻¹ K⁻¹ | |
| Glass (borosilicate) | 1.14 | W m⁻¹ K⁻¹ | |
| Water (liquid) | 0.606 | W m⁻¹ K⁻¹ | |
| Air (1 atm) | 0.0257 | W m⁻¹ K⁻¹ |
Fermi Energy & Free-Electron Density
Fermi Energy EF (free-electron model)
| Lithium (Li) | 4.74 | eV | |
| Sodium (Na) | 3.24 | eV | |
| Potassium (K) | 2.12 | eV | |
| Rubidium (Rb) | 1.85 | eV | |
| Caesium (Cs) | 1.59 | eV | |
| Copper (Cu) | 7.04 | eV | |
| Silver (Ag) | 5.49 | eV | |
| Gold (Au) | 5.53 | eV | |
| Beryllium (Be) | 14.3 | eV | |
| Magnesium (Mg) | 7.08 | eV | |
| Calcium (Ca) | 4.69 | eV | |
| Aluminium (Al) | 11.7 | eV | |
| Zinc (Zn) | 9.47 | eV | |
| Iron (Fe) | 11.1 | eV | |
| Lead (Pb) | 9.47 | eV | |
| Tin (Sn) | 10.2 | eV |
Free-Electron Density n
| Lithium (Li) | 4.70 | × 10²⁸ m⁻³ | |
| Sodium (Na) | 2.65 | × 10²⁸ m⁻³ | |
| Potassium (K) | 1.40 | × 10²⁸ m⁻³ | |
| Copper (Cu) | 8.49 | × 10²⁸ m⁻³ | |
| Silver (Ag) | 5.86 | × 10²⁸ m⁻³ | |
| Gold (Au) | 5.90 | × 10²⁸ m⁻³ | |
| Aluminium (Al) | 18.1 | × 10²⁸ m⁻³ | |
| Iron (Fe) | 17.0 | × 10²⁸ m⁻³ |
Fermi Temperature TF = EF/kB
| Copper (Cu) | 81 700 | K | |
| Aluminium (Al) | 135 800 | K |
Fermi Velocity vF
| Copper (Cu) | 1.57 × 10⁶ | m s⁻¹ | |
| Aluminium (Al) | 2.03 × 10⁶ | m s⁻¹ |
Work Functions
Work Function φ (polycrystalline unless noted)
| Caesium (Cs) | 2.1 | eV | |
| Rubidium (Rb) | 2.16 | eV | |
| Potassium (K) | 2.3 | eV | |
| Sodium (Na) | 2.36 | eV | |
| Lithium (Li) | 2.93 | eV | |
| Barium (Ba) | 2.52 | eV | |
| Calcium (Ca) | 2.87 | eV | |
| Magnesium (Mg) | 3.66 | eV | |
| Aluminium (Al) | 4.28 ± 0.05 | eV | |
| Zinc (Zn) | 3.63 | eV | |
| Lead (Pb) | 4.25 | eV | |
| Tin (Sn) | 4.42 | eV | |
| Silver (Ag) | 4.26–4.74 | eV | |
| Copper (Cu) | 4.65 ± 0.05 | eV | |
| Niobium (Nb) | 4.3 | eV | |
| Molybdenum (Mo) | 4.6 | eV | |
| Chromium (Cr) | 4.5 | eV | |
| Iron (Fe) | 4.81 | eV | |
| Nickel (Ni) | 5.15 ± 0.10 | eV | |
| Cobalt (Co) | 5.0 | eV | |
| Tungsten (W) | 4.55 ± 0.05 | eV | |
| Tantalum (Ta) | 4.25 | eV | |
| Rhenium (Re) | 4.96 | eV | |
| Osmium (Os) | 4.83 | eV | |
| Iridium (Ir) | 5.27 | eV | |
| Platinum (Pt) | 5.65 ± 0.05 | eV | |
| Gold (Au) | 5.1 ± 0.1 | eV | |
| Silicon (n-type) | 4.05–4.2 | eV | |
| Germanium | 4.0 | eV | |
| ITO (In₂O₃:Sn) | 4.4–4.9 | eV |
Superconducting Critical Temperatures
Elemental Superconductors — Tc
| Rhodium (Rh) | 3.25 × 10⁻⁴ | K | |
| Tungsten (W) | 1.5 × 10⁻³ | K | |
| Iridium (Ir) | 0.1125 ± 0.001 | K | |
| Aluminium (Al) | 1.175 ± 0.002 | K | |
| Zinc (Zn) | 0.850 ± 0.001 | K | |
| Titanium (Ti) | 0.40 ± 0.04 | K | |
| Rhenium (Re) | 1.697 ± 0.006 | K | |
| Indium (In) | 3.408 ± 0.001 | K | |
| Tin (Sn) | 3.722 ± 0.001 | K | |
| Tantalum (Ta) | 4.47 ± 0.04 | K | |
| Mercury α (Hg) | 4.154 ± 0.001 | K | |
| Lead (Pb) | 7.196 ± 0.006 | K | |
| Vanadium (V) | 5.40 ± 0.05 | K | |
| Lanthanum β (La) | 6.00 | K | |
| Niobium (Nb) — highest elemental | 9.26 ± 0.02 | K |
Conventional Compounds (BCS) — Tc
| NbTi | 9.8 | K | |
| NbN | 16.0 | K | |
| V₃Si | 17.1 | K | |
| Nb₃Sn | 18.3 | K | |
| K₃C₆₀ (fulleride) | 18.0 | K | |
| Nb₃Ge — highest conventional (1973) | 23.2 | K | |
| MgB₂ (2001) | 39 ± 1 | K |
Cuprate High-Tc — Tc
| (La,Ba)₂CuO₄ — first cuprate (Bednorz & Müller 1986) | 38 | K | |
| YBa₂Cu₃O₇ (YBCO) — first above LN₂ | 92 ± 1 | K | |
| Bi₂Sr₂CaCu₂O₈ (Bi-2212) | 85 | K | |
| Bi₂Sr₂Ca₂Cu₃O₁₀ (Bi-2223) | 108 | K | |
| Tl₂Ba₂Ca₂Cu₃O₁₀ (Tl-2223) | 127 | K | |
| HgBa₂Ca₂Cu₃O₈ (Hg-1223) — highest ambient-pressure Tc | 134 ± 1 | K |
Iron-Based Superconductors — Tc
| LaFeAsO₁₋ₓFₓ (La-1111) | 26 | K | |
| SmFeAsO₁₋ₓFₓ (Sm-1111) | 55 | K | |
| Ba₀.₆K₀.₄Fe₂As₂ (122) | 38 | K |
Hydride Superconductors (under pressure) — Tc
| H₃S at ~150 GPa (2015) | 203 ± 2 | K | |
| LaH₁₀ at ~170 GPa (2018) | 250–260 | K | |
| CaH₆ at ~172 GPa (2022) | ~215 | K |
Critical Magnetic Fields — Hc (Type I) at 0 K
| Aluminium (Al) | 10.5 | mT | |
| Lead (Pb) | 80.3 | mT | |
| Mercury (Hg) | 41.1 | mT |
Upper Critical Field Hc₂ at 0 K (Type II)
| Nb₃Sn | 29.5 | T | |
| NbTi | 15 | T | |
| YBCO | ~100 | T |
Density, Melting Point & Boiling Point
Density ρ at 20 °C
| Osmium (Os) — densest element | 22 590 ± 15 | kg m⁻³ | |
| Iridium (Ir) | 22 560 ± 10 | kg m⁻³ | |
| Platinum (Pt) | 21 450 | kg m⁻³ | |
| Rhenium (Re) | 21 020 | kg m⁻³ | |
| Tungsten (W) | 19 300 | kg m⁻³ | |
| Gold (Au) | 19 300 | kg m⁻³ | |
| Uranium (U) | 19 100 | kg m⁻³ | |
| Lead (Pb) | 11 340 | kg m⁻³ | |
| Silver (Ag) | 10 490 | kg m⁻³ | |
| Copper (Cu) | 8 960 | kg m⁻³ | |
| Nickel (Ni) | 8 908 | kg m⁻³ | |
| Iron (Fe) | 7 874 | kg m⁻³ | |
| Tin (Sn) | 7 265 | kg m⁻³ | |
| Zinc (Zn) | 7 133 | kg m⁻³ | |
| Titanium (Ti) | 4 507 | kg m⁻³ | |
| Aluminium (Al) | 2 700 | kg m⁻³ | |
| Silicon (Si) | 2 329 | kg m⁻³ | |
| Magnesium (Mg) | 1 738 | kg m⁻³ | |
| Lithium (Li) — lightest metal | 534 | kg m⁻³ | |
| Water (H₂O, 4 °C) | 999.97 | kg m⁻³ |
Melting Point Tm
| Tungsten (W) — highest of all elements | 3 695 ± 3 | K (3422 °C) | |
| Rhenium (Re) | 3 459 ± 3 | K (3186 °C) | |
| Osmium (Os) | 3 306 ± 30 | K (3033 °C) | |
| Tantalum (Ta) | 3 290 ± 10 | K (3017 °C) | |
| Molybdenum (Mo) | 2 896 ± 2 | K (2623 °C) | |
| Niobium (Nb) | 2 750 ± 2 | K (2477 °C) | |
| Iridium (Ir) | 2 719 ± 3 | K (2446 °C) | |
| Platinum (Pt) | 2 041 ± 1 | K (1768 °C) | |
| Iron (Fe) | 1 811 ± 1 | K (1538 °C) | |
| Nickel (Ni) | 1 728 ± 1 | K (1455 °C) | |
| Copper (Cu) | 1 358 ± 1 | K (1085 °C) | |
| Gold (Au) | 1 337 ± 1 | K (1064 °C) | |
| Silver (Ag) | 1 235 ± 1 | K (962 °C) | |
| Aluminium (Al) | 933.5 ± 0.1 | K (660 °C) | |
| Lead (Pb) | 600.6 ± 0.1 | K (327 °C) | |
| Tin (Sn) | 505.1 ± 0.1 | K (232 °C) | |
| Gallium (Ga) | 302.9 ± 0.1 | K (29.8 °C) | |
| Caesium (Cs) | 301.6 ± 0.1 | K (28.5 °C) | |
| Mercury (Hg) — liquid at room temperature | 234.3 ± 0.1 | K (−38.9 °C) | |
| Helium (He) — does not solidify at 1 atm | < 0.95 | K (requires pressure) |
Boiling Point Tb
| Tungsten (W) | 6 203 ± 300 | K (5930 °C) | |
| Iron (Fe) | 3 134 | K (2861 °C) | |
| Copper (Cu) | 2 835 | K (2562 °C) | |
| Silver (Ag) | 2 435 | K (2162 °C) | |
| Gold (Au) | 3 129 | K (2856 °C) | |
| Aluminium (Al) | 2 743 | K (2470 °C) | |
| Nitrogen (N₂) | 77.36 | K (−195.8 °C) | |
| Oxygen (O₂) | 90.19 | K (−183.0 °C) | |
| Helium (He) | 4.222 | K (−269.0 °C) | |
| Hydrogen (H₂) | 20.27 | K (−252.9 °C) |
Elastic Moduli & Thermal Properties
Young's Modulus E
| Diamond | ~1 050 | GPa | |
| Tungsten (W) | 411 | GPa | |
| Osmium (Os) | 590 | GPa | |
| Iridium (Ir) | 528 | GPa | |
| Iron (Fe) | 211 | GPa | |
| Nickel (Ni) | 200 | GPa | |
| Copper (Cu) | 128 ± 5 | GPa | |
| Silicon (Si) | 130–185 | GPa | |
| Titanium (Ti) | 116 | GPa | |
| Gold (Au) | 79 | GPa | |
| Silver (Ag) | 83 | GPa | |
| Aluminium (Al) | 69 | GPa | |
| Lead (Pb) | 16 | GPa |
Debye Temperature θD
| Diamond | 2 230 | K | |
| Beryllium (Be) | 1 440 | K | |
| Iron (Fe) | 470 | K | |
| Silicon (Si) | 645 | K | |
| Aluminium (Al) | 428 | K | |
| Copper (Cu) | 343 | K | |
| Silver (Ag) | 225 | K | |
| Gold (Au) | 170 | K | |
| Lead (Pb) | 105 | K |
Specific Heat Capacity cp at 25 °C
| Lithium (Li) | 3 582 | J kg⁻¹ K⁻¹ | |
| Beryllium (Be) | 1 825 | J kg⁻¹ K⁻¹ | |
| Magnesium (Mg) | 1 023 | J kg⁻¹ K⁻¹ | |
| Aluminium (Al) | 897 | J kg⁻¹ K⁻¹ | |
| Titanium (Ti) | 520 | J kg⁻¹ K⁻¹ | |
| Iron (Fe) | 449 | J kg⁻¹ K⁻¹ | |
| Nickel (Ni) | 444 | J kg⁻¹ K⁻¹ | |
| Copper (Cu) | 385 | J kg⁻¹ K⁻¹ | |
| Silver (Ag) | 235 | J kg⁻¹ K⁻¹ | |
| Tungsten (W) | 132 | J kg⁻¹ K⁻¹ | |
| Gold (Au) | 129 | J kg⁻¹ K⁻¹ | |
| Lead (Pb) | 128 | J kg⁻¹ K⁻¹ | |
| Water (H₂O) | 4 182 | J kg⁻¹ K⁻¹ |
Linear Thermal Expansion α at 25 °C
| Tungsten (W) | 4.5 | × 10⁻⁶ K⁻¹ | |
| Silicon (Si) | 2.6 | × 10⁻⁶ K⁻¹ | |
| Iron (Fe) | 11.8 | × 10⁻⁶ K⁻¹ | |
| Nickel (Ni) | 13.0 | × 10⁻⁶ K⁻¹ | |
| Copper (Cu) | 16.5 | × 10⁻⁶ K⁻¹ | |
| Gold (Au) | 14.2 | × 10⁻⁶ K⁻¹ | |
| Aluminium (Al) | 23.1 | × 10⁻⁶ K⁻¹ | |
| Lead (Pb) | 28.9 | × 10⁻⁶ K⁻¹ | |
| Invar (Fe₆₄Ni₃₆) | 1.2 | × 10⁻⁶ K⁻¹ |
Semiconductor Band Gaps & Carrier Properties
Indium antimonide (InSb) — narrow gap
| Band gap Eg | 0.180 ± 0.001 | eV (direct) | |
| Electron mobility μe | 77 000 | cm² V⁻¹ s⁻¹ |
Indium arsenide (InAs)
| Band gap Eg | 0.354 ± 0.001 | eV (direct) | |
| Electron mobility μe | 33 000 | cm² V⁻¹ s⁻¹ |
Germanium (Ge)
| Band gap Eg | 0.6610 ± 0.0001 | eV (indirect) | |
| Band gap Eg (4 K) | 0.7437 | eV (indirect) | |
| Electron mobility μe | 3 900 | cm² V⁻¹ s⁻¹ | |
| Hole mobility μh | 1 900 | cm² V⁻¹ s⁻¹ | |
| Intrinsic carrier density ni | 2.4 × 10¹³ | cm⁻³ |
Indium phosphide (InP)
| Band gap Eg | 1.344 | eV (direct) | |
| Electron mobility μe | 4 600 | cm² V⁻¹ s⁻¹ |
Silicon (Si)
| Band gap Eg | 1.1242 ± 0.0001 | eV (indirect) | |
| Band gap Eg (4 K) | 1.1692 | eV | |
| Electron mobility μe | 1 450 | cm² V⁻¹ s⁻¹ | |
| Hole mobility μh | 450 | cm² V⁻¹ s⁻¹ | |
| Intrinsic carrier density ni | 1.07 × 10¹⁰ | cm⁻³ | |
| Relative permittivity εr | 11.7 | ||
| Breakdown field Ebreak | 3 × 10⁵ | V cm⁻¹ |
Gallium arsenide (GaAs)
| Band gap Eg | 1.422 ± 0.001 | eV (direct) | |
| Electron mobility μe | 8 500 | cm² V⁻¹ s⁻¹ | |
| Hole mobility μh | 400 | cm² V⁻¹ s⁻¹ | |
| Relative permittivity εr | 12.9 |
Gallium phosphide (GaP)
| Band gap Eg | 2.26 | eV (indirect) |
Gallium nitride (GaN) — wide gap
| Band gap Eg | 3.44 ± 0.01 | eV (direct) | |
| Electron mobility μe | 1 000 | cm² V⁻¹ s⁻¹ | |
| Breakdown field Ebreak | ~5 × 10⁶ | V cm⁻¹ |
Silicon carbide 4H-SiC — wide gap
| Band gap Eg | 3.23 | eV (indirect) | |
| Electron mobility μe | 900 | cm² V⁻¹ s⁻¹ | |
| Breakdown field Ebreak | ~3 × 10⁶ | V cm⁻¹ |
Zinc oxide (ZnO)
| Band gap Eg | 3.44 | eV (direct) |
Aluminium nitride (AlN)
| Band gap Eg | 6.2 | eV (direct) |
Diamond — ultra-wide gap
| Band gap Eg | 5.47 | eV (indirect) | |
| Electron mobility μe | 2 200 | cm² V⁻¹ s⁻¹ | |
| Breakdown field Ebreak | ~10⁷ | V cm⁻¹ | |
| Thermal conductivity | 1 000–2 200 | W m⁻¹ K⁻¹ |
Graphene (2D)
| Band gap Eg | 0 (semimetal) | ||
| Electron mobility μe (suspended) | ~200 000 | cm² V⁻¹ s⁻¹ | |
| Fermi velocity vF | 1.0 × 10⁶ | m s⁻¹ |
MoS₂ monolayer (2D)
| Band gap Eg (direct, monolayer) | 1.8 | eV (direct) | |
| Band gap Eg (indirect, bulk) | 1.2 | eV (indirect) |